H55S1222EFP-75E by SK Hynix | Sourcengine

SK Hynix H55S1222EFP-75E

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Static Column DRAM, 4MX32, 6ns, CMOS, PBGA90
Category
Semiconductors Memory ICs DRAMs STATIC COLUMN DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
8 mm
Length
13 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B90
Memory Width
32
Organization
4MX32
Package Code
VFBGA
Self Refresh
YES
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
134217728 bit
Memory IC Type
STATIC COLUMN DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Terminal Pitch
0.8 mm
Access Time-Max
6 ns
Number of Ports
1
Number of Words
4194304 words
Terminal Finish
TIN SILVER COPPER
Seated Height-Max
1 mm
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
90 mA
Number of Functions
1
Number of Terminals
90
Standby Current-Max
1.0E-5 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
1,2,4,8,FP
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
BGA90,9X15,32
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Max (Vsup)
1.95 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
133 MHz
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
20