GTVA107001FC-V1-R2 by WOLFSPEED INC | Sourcengine

WOLFSPEED INC GTVA107001FC-V1-R2

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
17.5
Drain Current-Max (ID) (A)
10
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
150
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
225
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED