GTVA101K42EV-V1-R2 by WOLFSPEED INC | Sourcengine

WOLFSPEED INC GTVA101K42EV-V1-R2

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
RF Power Field-Effect Transistor, 2-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
17
Drain Current-Max (ID) (A)
48
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
125
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
225
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED