GSFP0854
GOOD-ARK ELECTRONICS CO LTD
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 6.6A I(D), 100V, 0.33ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)32.2
- Drain Current-Max (ID) (A)6.6
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)22
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)25
- Turn-off Time-Max (toff) (ns)33
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)26.4
- Drain-source On Resistance-Max (ohm)0.33
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GSFP0854