GSFB0203D
GOOD-ARK ELECTRONICS CO LTD
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)1.25
- Drain Current-Max (ID) (A)3
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)31
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)75
- Turn-off Time-Max (toff) (ns)78
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)1.25
- Pulsed Drain Current-Max (IDM) (A)12
- Drain-source On Resistance-Max (ohm)0.09
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GSFB0203D