GS82612DT19LE-250MV
GSI Technology, Inc.
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionQDR II SRAM, 16MX18, CMOS
- Category
- ECCN9A515.E.1
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeSEPARATE
- TechnologyCMOS
- Width (mm)21
- Length (mm)25
- JESD-30 CodeR-XBGA-N165
- Memory Width18
- Package CodeLGA
- Output EnableNO
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory IC TypeQDR II SRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Parallel/SerialPARALLEL
- Terminal PositionBOTTOM
- Memory Organization16MX18
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1.27
- Number of Words Code16M
- Memory Density (bits)301989888
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.93
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)16777216
- Standby Current-Max (A)0.52
- Standby Voltage-Min (V)1.7
- Supply Current-Max (mA)850
- Package Equivalence CodeLGA165,11X15,50
- Clock Frequency-Max (MHz)250
- Moisture Sensitivity Level3
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
- Screening Level / Reference StandardMIL-PRF-38535 Class V
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