GS82612DT19CE-350MS by GSI Technology, Inc. | Sourcengine

GSI Technology, Inc. GS82612DT19CE-350MS

Lifecycle status
Active
REACH
REACH compliant
Description
QDR II SRAM, 16MX18, CMOS, CBGA165
Category
Semiconductors Memory ICs SRAMs QDR II SRAM

ECCN
9A515.E.1
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
Total Dose
100k Rad(Si) V
Width (mm)
21
Length (mm)
25
JESD-30 Code
R-CBGA-X165
Memory Width
18
Package Code
CGA
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
Memory IC Type
QDR II SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Temperature Grade
MILITARY
Terminal Position
BOTTOM
Memory Organization
16MX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1.27
Number of Words Code
16M
Memory Density (bits)
301989888
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
16777216
Standby Current-Max (A)
0.59
Standby Voltage-Min (V)
1.7
Supply Current-Max (mA)
950
Package Equivalence Code
CGA165,11X15,50
Clock Frequency-Max (MHz)
350
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55