GS816236DD-200M
GSI Technology, Inc.
- Lifecycle statusActive
- DescriptionSRAM 2.5 or 3.3V 512K x 36 18M
- Category
- ECCN3A991.B.2.B
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)13
- Length (mm)15
- JESD-30 CodeR-PBGA-B165
- Memory Width36
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeCACHE SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Lead (Sn63Pb37)
- Temperature GradeMILITARY
- Terminal PositionBOTTOM
- Additional FeatureIT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE
- Memory Organization512KX36
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)6.5
- Number of Words Code512K
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)524288
- Moisture Sensitivity Level3
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
0 suppliers available to buy or to bid for GS816236DD-200M
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
GS816236DD-200M