GS66516B-TR
GAN SYSTEMS INC
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionMOSFET 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XBCC-N6
- ConfigurationSingle
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishGOLD OVER NICKEL
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeP-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)60
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)650
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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GS66516B-TR