GS66508T-TR
GAN SYSTEMS INC
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XBCC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishGold (Au) - with Nickel (Ni) barrier
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)30
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)650
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Time@Peak Reflow Temperature-Max (s)30
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GS66508T-TR