GS66504B-MR
GAN SYSTEMS INC
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH GaN 650V 15A 3-Pin ULGA T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PBCC-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishGOLD OVER NICKEL
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)15
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)1.1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)30
- Drain-source On Resistance-Max (ohm)0.13
- Time@Peak Reflow Temperature-Max (s)30
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GS66504B-MR