GP800DHB18S by Microsemi Corporation | Sourcengine

Microsemi Corporation GP800DHB18S

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
4
Number of Elements
2
Power Dissipation-Max (W)
6000
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
800
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1800