GP800DHB12T by ZARLINK SEMICONDUCTOR INC | Sourcengine

ZARLINK SEMICONDUCTOR INC GP800DHB12T

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.5 V
Number of Elements
2
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
800 A
Power Dissipation-Max (Abs)
6000 W
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
260