GP600DHB16S by Microsemi Corporation | Sourcengine

Microsemi Corporation GP600DHB16S

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 600A I(C), 1600V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
4.1
Number of Elements
1
Power Dissipation-Max (W)
5000
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
600
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1600