GP1200FSS16S
ZARLINK SEMICONDUCTOR INC
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 1200A I(C), 1600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)4.1
- Number of Elements1
- Power Dissipation-Max (W)10000
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)1200
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1600
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GP1200FSS16S