GP1200FSS12S by GEC PLESSEY SEMICONDUCTORS | Sourcengine

GEC PLESSEY SEMICONDUCTORS GP1200FSS12S

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
3.6
Number of Elements
1
Power Dissipation-Max (W)
7500
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
1200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200