GN6075E by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. GN6075E

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
GENERAL PURPOSE SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
400
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
1000
Power Dissipation-Max (W)
250
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
700
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600