GN6030C
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationGENERAL PURPOSE SWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Fall Time-Max (ns)400
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)400
- Power Dissipation-Max (W)150
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)400
- Collector Current-Max (IC) (A)30
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5
- Collector-emitter Voltage-Max (V)600
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GN6030C
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GN6030C