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GE28F008B3BA70

Intel Corporation

Intel Corporation GE28F008B3BA70
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NOR TYPE
  • Boot Block
    BOTTOM
  • Technology
    CMOS
  • Toggle Bit
    NO
  • Width (mm)
    6.5
  • Length (mm)
    7.91
  • Data Polling
    NO
  • JESD-30 Code
    R-PBGA-B46
  • Memory Width
    8
  • Package Code
    VFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    BOTTOM BOOT BLOCK
  • Memory Organization
    1MX8
  • Number of Functions
    1
  • Number of Terminals
    46
  • Sector Size (words)
    8K,64K
  • Terminal Pitch (mm)
    0.75
  • Access Time-Max (ns)
    70
  • Number of Words Code
    1M
  • Memory Density (bits)
    8388608
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Number of Sectors/Size
    8,15
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    3.6
  • Supply Voltage-Min (V)
    2.7
  • Supply Voltage-Nom (V)
    3
  • Number of Words (words)
    1048576
  • Programming Voltage (V)
    2.7
  • Standby Current-Max (A)
    5.0E-6
  • Supply Current-Max (mA)
    55
  • Package Equivalence Code
    BGA45,6X8,30
  • Endurance (Write/Erase Cycles)
    100000
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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GE28F008B3BA70
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GE28F008B3BA70