FX611
SANYO Electric Co.,Ltd.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 2A I(D), 30V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.5
- Drain Current-Max (ID) (A)2
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Drain-source On Resistance-Max (ohm)0.26
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FX611
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FX611