FX3SMJ-3
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 3A I(D), 150V, 1.32ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)30
- Drain Current-Max (ID) (A)3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)150
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)12
- Drain-source On Resistance-Max (ohm)1.32
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FX3SMJ-3
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FX3SMJ-3