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FU82SDM-F1

Mitsubishi Electric Corp.

Mitsubishi Electric Corp. FU82SDM-F1
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1550
  • Semiconductor Material
    InGaAs
  • Forward Current-Max (A)
    0.002
  • Forward Voltage-Max (V)
    1.8
  • Spectral Bandwidth (nm)
    2.5
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    -20

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FU82SDM-F1
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FU82SDM-F1