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FU45SDF4

Mitsubishi Electric Corp.

Mitsubishi Electric Corp. FU45SDF4
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1330
  • Semiconductor Material
    InGaAs
  • Forward Voltage-Max (V)
    1.8
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    65
  • Operating Temperature-Min (Cel)
    -20

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FU45SDF4
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FU45SDF4