FSYC9260R3
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 28A I(D), 200V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-CBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)83
- Drain Current-Max (ID) (A)28
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)84
- Drain-source On Resistance-Max (ohm)1.3
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FSYC9260R3