FSS430D4
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-257AA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)3 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)50 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max2.7 ohm
- Pulsed Drain Current-Max (IDM)9 A
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FSS430D4
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FSS430D4