FSS13AOD3
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-257AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)12 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)95 ns
- DS Breakdown Voltage-Min100 V
- Turn-off Time-Max (toff)70 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max56 W
- Drain-source On Resistance-Max0.17 ohm
- Pulsed Drain Current-Max (IDM)36 A
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FSS13AOD3