FSL234R3
Intersil Corporation
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 4A I(D), 250V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)25
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)250
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)12
- Drain-source On Resistance-Max (ohm)0.61
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FSL234R3