FSGYC160D1
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-CBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)70
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Pulsed Drain Current-Max (IDM) (A)200
- Drain-source On Resistance-Max (ohm)0.011
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FSGYC160D1