FS8R12KF
EUPEC GMBH & CO KG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max4 V
- JESD-30 CodeR-PUFM-X17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals17
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)8 A
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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FS8R12KF