FS5AS-10A-T13
Renesas Electronics Corp.
- Lifecycle statusNRFND
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.5 ohm
- Pulsed Drain Current-Max (IDM)15 A
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FS5AS-10A-T13
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FS5AS-10A-T13