FS35R12KE3G by EUPEC GMBH & CO KG | Sourcengine

EUPEC GMBH & CO KG FS35R12KE3G

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X28
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.15
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
28
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
200
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
140
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
610
Collector Current-Max (IC) (A)
55
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
1200