FRL234H
HARRIS SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 0.7ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureRADIATION HARDENED
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max (ohm)0.7
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FRL234H
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FRL234H