FRK9160D4
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 40A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-204AE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)40 A
- Turn-on Time-Max (ton)1050 ns
- DS Breakdown Voltage-Min100 V
- Turn-off Time-Max (toff)1200 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max300 W
- Drain-source On Resistance-Max0.085 ohm
- Pulsed Drain Current-Max (IDM)100 A
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FRK9160D4