FRE9260R4
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 19A I(D), 200V, 0.21ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-258AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)19 A
- DS Breakdown Voltage-Min200 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max150 W
- Drain-source On Resistance-Max0.21 ohm
- Pulsed Drain Current-Max (IDM)57 A
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FRE9260R4