FRE9160R
HARRIS SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 0.095ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-MSFM-P3
- JEDEC-95 CodeTO-258AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureRADIATION HARDENED
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max (ohm)0.095
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FRE9160R
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FRE9160R