FQU6N40 by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQU6N40

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 4.2A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
330 mJ
Drain-source On Resistance-Max
1.15 ohm
Pulsed Drain Current-Max (IDM)
16.8 A