FQT3P20 by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQT3P20

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.67A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
0.67 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
200 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
2.5 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
150 mJ
Drain-source On Resistance-Max
2.7 ohm
Pulsed Drain Current-Max (IDM)
2.7 A