FQI6N45 by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQI6N45

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 6.2A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
450 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
3.13 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
350 mJ
Drain-source On Resistance-Max
1.1 ohm
Pulsed Drain Current-Max (IDM)
25 A