FQI17P10 by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQI17P10

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
100
Drain Current-Max (ID) (A)
16.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
580
Pulsed Drain Current-Max (IDM) (A)
66
Drain-source On Resistance-Max (ohm)
0.19