FQD9N25TM-SBEK002
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)55
- Drain Current-Max (ID) (A)7.4
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)30
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FQD9N25TM-SBEK002