FQA5N90_F109 by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP FQA5N90_F109

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 5.8A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5.8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
900 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
185 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
660 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
2.3 ohm
Pulsed Drain Current-Max (IDM)
23.2 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED