FPM2750QFN
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET
- Category
- ECCN5A991.G
- ECCN GovernanceEAR
- HTS Code8542.33.00.01
- SB Code8542.33.00.00
- ApplicationAMPLIFIER
- JESD-30 CodeS-PQCC-N16
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- J-STD-609 Codee3
- Operating ModeDEPLETION MODE
- Terminal FinishMatte Tin (Sn) - annealed
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals16
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)6
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)1
- Time@Peak Reflow Temperature-Max (s)30
0 suppliers available to buy or to bid for FPM2750QFN
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
FPM2750QFN
Send an RFQ
FPM2750QFN