FPD7612-000S3
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCN5A991.G
- ECCN GovernanceEAR
- HTS Code8542.33.00.01
- SB Code8542.33.00.00
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N5
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals5
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Power Gain-Min (Gp) (dB)11
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)8
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)0.5
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FPD7612-000S3
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FPD7612-000S3