FPD750SOT89E
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCN5A991.G
- ECCN GovernanceEAR
- HTS Code8541.21.00.40
- SB Code8541.21.00.40
- JESD-30 CodeR-PSSO-F3
- ConfigurationSINGLE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min8 V
- Operating Temperature-Max175 Cel
- Moisture Sensitivity Level2
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)260
- Power Dissipation Ambient-Max1.8 W
- Time@Peak Reflow Temperature-Max (s)40
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FPD750SOT89E
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FPD750SOT89E