FPD750DFNSR by RF MICRO DEVICES INC | Sourcengine

RF MICRO DEVICES INC FPD750DFNSR

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
S-PDSO-N6
Configuration
SINGLE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
8 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
1.5 W