FPD750-000SQ
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCN5A991.G
- ECCN GovernanceEAR
- HTS Code8541.21.00.40
- SB Code8541.21.00.40
- JESD-30 CodeR-XUUC-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min10 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max2.3 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FPD750-000SQ
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FPD750-000SQ