FPD6836SOT343ESB
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCN5A991.G
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.95
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Power Gain-Min (Gp) (dB)17
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)6
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)0.7
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FPD6836SOT343ESB
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FPD6836SOT343ESB