FPD1500SOT89ESQ
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCN5A991.G
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.95
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSSO-F3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)8
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)2.3
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FPD1500SOT89ESQ