FPD1500DFNSB
RF MICRO DEVICES INC
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeS-PDSO-N6
- ConfigurationSINGLE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Moisture Sensitivity Level1
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)8
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)2.2
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FPD1500DFNSB