FP2250QFN-1
FILTRONIC SOLID STATE INC
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CQCC-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min6 V
- Transistor Element MaterialGALLIUM ARSENIDE
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FP2250QFN-1